16 results
Characterization of SOI wafers by synchrotron X-ray topography
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- Journal:
- The European Physical Journal - Applied Physics / Volume 27 / Issue 1-3 / July 2004
- Published online by Cambridge University Press:
- 15 July 2004, pp. 439-442
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- July 2004
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Investigation of the Effect of Thermal History on Ring-OSF Formation in CZ-Silicon Crystals
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- Journal:
- MRS Online Proceedings Library Archive / Volume 510 / January 1998
- Published online by Cambridge University Press:
- 10 February 2011, 21
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- January 1998
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Characteristics of GaN Schottky Diode Grown on Sapphire Substrate by Mocvd
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- Journal:
- MRS Online Proceedings Library Archive / Volume 482 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 1101
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- 1997
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Degradation of InGaN/AlGaN LED on Sapphire Substrate Grown by MOCVD
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- Journal:
- MRS Online Proceedings Library Archive / Volume 449 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 1191
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- 1996
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GaAs / AlGaAs SQW Optical Switch on Si
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- Journal:
- MRS Online Proceedings Library Archive / Volume 281 / 1992
- Published online by Cambridge University Press:
- 25 February 2011, 363
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- 1992
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Initial Stage of Heteroepitaxial Growth of Compound Semiconductor on Si Substrate
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- Journal:
- MRS Online Proceedings Library Archive / Volume 221 / 1991
- Published online by Cambridge University Press:
- 25 February 2011, 155
- Print publication:
- 1991
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Room-Temperature CW Operation of SQW Lasers on Si Grown with AiGaAs/AlGaP Intermediate Layers by MoCVD
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- Journal:
- MRS Online Proceedings Library Archive / Volume 228 / 1991
- Published online by Cambridge University Press:
- 21 February 2011, 189
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- 1991
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AlGaAs/GaAs Double-Heterostructure Optical Waveguide on Si Substrates
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- Journal:
- MRS Online Proceedings Library Archive / Volume 228 / 1991
- Published online by Cambridge University Press:
- 21 February 2011, 225
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- 1991
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Undoped GaAs with a Low Electron Concentration Grown on Si by Mocvd
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- Journal:
- MRS Online Proceedings Library Archive / Volume 198 / 1990
- Published online by Cambridge University Press:
- 28 February 2011, 213
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- 1990
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The Influence of Initial Growth on Defect Generation in Mocvd Grown GaAs/Si Heteroepitaxial Layers
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- Journal:
- MRS Online Proceedings Library Archive / Volume 198 / 1990
- Published online by Cambridge University Press:
- 28 February 2011, 207
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- 1990
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Tem Characterization of Dislocations in GaAs-ON-Si Heterostructures Wite Sjpereatlice Intermediate Iayers
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- Journal:
- MRS Online Proceedings Library Archive / Volume 198 / 1990
- Published online by Cambridge University Press:
- 28 February 2011, 201
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- 1990
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Effects of Growth Temperature on MOCVD-Grown GaAs-ON-Si
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- Journal:
- MRS Online Proceedings Library Archive / Volume 148 / 1989
- Published online by Cambridge University Press:
- 25 February 2011, 235
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- 1989
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Evaluation of Anti-Phase-Boundaries in GaAs/Si Heterostructures by Transmission Electron Microscopy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 148 / 1989
- Published online by Cambridge University Press:
- 25 February 2011, 267
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- 1989
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Nucleation Studies of Lattice Matched and Mis-Matched Heteroepitaxial Layers Using the GaAs/AlxGa1−xP/Si System.
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- Journal:
- MRS Online Proceedings Library Archive / Volume 148 / 1989
- Published online by Cambridge University Press:
- 25 February 2011, 253
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- 1989
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Correlation Between Crystallinity and Schottky Diode Characteristics of GaAs Grown on Siby MOCVD
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- Journal:
- MRS Online Proceedings Library Archive / Volume 148 / 1989
- Published online by Cambridge University Press:
- 25 February 2011, 273
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- 1989
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High Quality GaP Growth on Si Substrates By Mocvd
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- Journal:
- MRS Online Proceedings Library Archive / Volume 116 / 1988
- Published online by Cambridge University Press:
- 28 February 2011, 319
- Print publication:
- 1988
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